1.5V Drive Pch MOSFET
RP1A090ZP
? Structure
Silicon P-channel MOSFET
? Dimensions (Unit : mm)
MPT6
(Single)
? Features
(6)
(5)
(4)
1) Low Voltage Drive(1.5V drive).
2) Built-in G-S Protection Diode.
(1)
(2)
(3)
3) Small Surface Mount Package (MPT6).
? Application
Switching
? Packaging specifications
? Inner circuit
Type
Package
Code
Taping
TR
(6)
(5)
(4)
Basic ordering unit (pieces)
RP1A090ZP
1000
?
(1) Source
? 2
? Absolute maximum ratings (Ta = 25 ° C)
(2) Source
(3) Gate
? 1
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Pulsed
Continuous
Source current
(Body Diode)
Pulsed
Power dissipation
Symbol
V DSS
V GSS
I D
*1
I DP
I S
*1
I SP
*2
P D
Limits
? 12
± 10
± 9
± 36
? 1.6
? 36
2.0
Unit
V
V
A
A
A
A
W
(4) Drain
(5) Drain
(6) Drain
(1)
(2) (3)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Channel temperature
Range of storage temperature
Tch
Tstg
150
? 55 to +150
° C
° C
*1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
*2 Mounted on a ceramic board.
? Thermal resistance
Parameter
Symbol
Limits
Unit
Channel to Ambient
Rth
(ch-a) *
62.5
° C / W
*Mounted on a ceramic board.
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?20 10 ROHM Co., Ltd. All rights reserved.
1/5
2010.07 - Rev.B
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